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| S DU/D30N02 S amHop Microelectronics C orp. May,2004 ver1.1 N-C hannel E nhancement Mode Field E ffect Transistor P R ODUC T S UMMAR Y V DS S 20V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 25A R DS (ON) ( m W ) Max 20 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD S E R IE S TO-251(l-P AK) S ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted) P arameter Drain-S ource Voltage Gate-S ource Voltage Drain C urrent-C ontinuous -P ulsed a S ymbol VDS VGS @ TJ=125 C ID IDM IS PD TJ, TS TG Limit 20 12 25 42 30 50 -55 to 175 Unit V V A A A W C Drain-S ource Diode Forward C urrent Maximum P ower Dissipation @ Tc=25 C Operating and S torage Temperature R ange THE R MAL C HAR AC TE R IS TIC S Thermal R esistance, Junction-to-C ase Thermal R esistance, Junction-to-Ambient 1 R JC R JA 3 50 C /W C /W S DU/D30N02 E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter OFF CHAR ACTE R IS TICS Drain-S ource Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) R DS (ON) ID(ON) gFS b S ymbol Condition VGS = 0V, ID = 250uA VDS = 16V, VGS = 0V VGS = 8V, VDS = 0V VDS = VGS, ID = 250uA VGS = 4.5V, ID = 20A VDS = 10V, VGS = 4.5V VDS = 10V, ID = 20A Min Typ Max Unit 20 1 100 V uA nA V ON CHAR ACTE R IS TICS a Gate Threshold Voltage Drain-S ource On-S tate R esistance On-S tate Drain Current Forward Transconductance 0.9 1.0 15 30 25 1385 595 145 VDD = 15V, ID =1A, VGS = 10 V, R GE N = 6 ohm 26 31 122 27 VDS = 10V, ID = 30A, VGS = 4.5 V 2 1.5 20 m ohm A S PF PF PF DYNAMIC CHAR ACTE R IS TICS Input Capacitance Output Capacitance R everse Transfer Capacitance CISS COSS CRSS b VDD =10V, VGS = 0V f = 1.0MHZ S WITCHING CHAR ACTE R IS TICS Turn-On Delay Time R ise Time Turn-Off Delay Time Fall time Total Gate Charge Gate-S ource Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd ns ns ns ns nC nC nC 18 4.6 5.3 S DU/D30N02 E LE CTR ICAL CHAR ACTE R IS TICS (TC=25 C unless otherwise noted) Parameter Diode Forward Voltage S ymbol VSD Condition VGS = 0V, Is = 30A Min Typ Max Unit 1.3 V DR AIN-S OUR CE DIODE CHAR ACTE R IS TICS a Notes a.Pulse Test:Pulse Width O 300us, Duty Cycle O 2%. b.Guaranteed by design, not subject to production testing. 40 35 V G S =10,9,8,7,6,5,4V 30 40 25 C ID, Drain C urrent (A) 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 V G S =3V ID, Drain C urrent (A) 30 T j=125 C 20 10 -55 C 0 0 1 2 3 4 5 6 V DS , Drain-to-S ource Voltage (V ) V G S , G ate-to-S ource Voltage (V ) F igure 1. Output C haracteris tics 3000 1.3 F igure 2. Trans fer C haracteris tics R DS (ON), Normalized Drain-S ource, On-R es is tance V G S =4.5V 1.2 1.1 1.0 0.9 0.8 0.7 T j=125 C 25 C -55 C 2500 C , C apacitance (pF ) 2000 1500 1000 500 0 C os s C rs s 0 5 10 15 C is s 0 10 20 30 40 V DS , Drain-to S ource Voltage (V ) ID, Drain C urrent(A) F igure 3. C apacitance F igure 4. On-R es is tance Variation with Drain C urrent and Temperature 3 S DU/D30N02 B V DS S , Normalized Drain-S ource B reakdown V oltage V th, Normalized G ate-S ource T hres hold V oltage 1.15 1.10 1.05 1.00 0.95 0.90 0.85 0.80 -50 -25 0 25 50 75 100 125 150 V DS =V G S ID=250uA 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250uA 6 T j, J unction T emperature ( C ) T j, J unction T emperature ( C ) F igure 5. G ate T hres hold V ariation with T emperature 60 V DS =10V F igure 6. B reakdown V oltage V ariation with T emperature 40 gFS , T rans conductance (S ) Is , S ource-drain current (A) 50 40 30 20 10 0 0 5 10 15 20 10 1.0 0.1 0.4 0.6 0.8 1.0 1.2 1.4 IDS , Drain-S ource C urrent (A) V S D, B ody Diode F orward V oltage (V ) F igure 7. T rans conductance V ariation with Drain C urrent 10 ID, Drain C urrent (A) F igure 8. B ody Diode F orward V oltage V ariation with S ource C urrent 50 V G S , G ate to S ource V oltage (V ) 8 6 4 2 0 0 VDS =20V ID=30A 10 R (O DS N) L im it 1m s 10 ms DC 1s 10 0m s 1 0.1 0.1 V G S =4.5V S ingle P ulse T c=25 C 5 10 15 20 25 30 35 40 1 10 30 60 Qg, T otal G ate C harge (nC ) V DS , Drain-S ource V oltage (V ) F igure 9. G ate C harge 4 F igure 10. Maximum S afe O perating Area S DU/D30N02 V DD ton V IN D VG S R GE N G 90% toff tr 90% RL V OUT td(on) V OUT td(off) 90% 10% tf 10% INVE R TE D 6 S V IN 50% 10% 50% P ULS E WIDTH F igure 11. S witching T es t C ircuit F igure 12. S witching Waveforms 2 r(t),Normalized E ffective T ransient T hermal Impedance 1 D=0.5 0.2 0.1 0.1 0.05 0.02 0.01 S ING LE P ULS E 0.01 10 -5 -4 -3 -2 -1 P DM t1 1. 2. 3. 4. 10 10 10 t2 R cJ C (t)=r (t) * R cJ C R cJ C =S ee Datas heet T J M-T c = P DM* R cJ C (t) Duty C ycle, D=t1/t2 1 10 10 S quare Wave P uls e Duration (s ec) F igure 13. Normalized T hermal T rans ient Impedance C urve 5 S DU/D30N02 6 S DU/D30N02 5 95 7 84 9 6.00 35 05 85 0.94 4 3 0 9 7 30 3 9 36 3 41 3 3 5 1 4 L2 2.29 9.70 1.425 0.650 0.600 BSC 1 1.625 0.850 REF. 0.090 82 56 6 0.024 BSC 398 0.064 33 REF. 7 S DU/D30N02 TO-251 Tube TO251 Tube/TO-252 Tape and Reel Data " A" TO-252 Carrier Tape UNIT:P PACKAGE TO-252 (16 P) A0 6.80 O0.1 B0 10.3 O0.1 K0 2.50 O0.1 D0 r2 D1 r1.5 + 0.1 -0 E 16.0 0.3O E1 1.75 0.1O E2 7.5 O0.15 P0 8.0 O0.1 P1 4.0 O0.1 P2 2.0 O0.15 T 0.3 O0.05 TO-252 Reel S UNIT:P TAPE SIZE 16 P REEL SIZE r 330 M r330 O 0.5 N r97 O 1.0 W 17.0 + 1.5 -0 T 2.2 H r13.0 + 0.5 - 0.2 K 10.6 S 2.0 O0.5 G R V 8 |
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